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| AP10N60W RoHS-compliant Product Advanced Power Electronics Corp. 100% Avalanche Test Fast Switching Characteristic Simple Drive Requirement G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 600V 0.75 10A S Description AP10N60 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-3P type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness. The TO-3P package is widely preferred for commercial-industrial applications. The device is suited for switch mode power supplies, DC-AC converters and high current high speed switching circuits. G D S TO-3P Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 600 30 10 5.8 36 156 2 Units V V A A A W mJ A Total Power Dissipation Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 50 10 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.8 40 Unit /W /W Data & specifications subject to change without notice 1 200803181 AP10N60W Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=150 C) o o Test Conditions VGS=0V, ID=1mA 3 Min. 600 2 - Typ. 3.8 45 11 15 16 9 48 11 475 4.3 Max. Units 0.75 4 25 250 100 72 V V S uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=10V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=4A VDS=480V, VGS=0V VDS=480V, VGS=0V VGS=30V ID=8A VDS=480V VGS=10V VDD=300V ID=4A RG=10,VGS=4.7V RD=75 VGS=0V VDS=15V f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 3 2380 3800 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Tj=25, IS=8A, VGS=0V IS=8A, VGS=0V, dI/dt=100A/s Min. - Typ. 550 9.2 Max. Units 1.5 V ns uC trr Qrr Notes: Reverse Recovery Time Reverse Recovery Charge 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25 C , VDD=50V , L=1.0mH , RG=25 , IAS=10A. 3.Pulse test o THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2 AP10N60W 20 10 T C =25 C 16 o 10V 6.0V ID , Drain Current (A) T C =150 o C 8 10V 6.0V 5.0V ID , Drain Current (A) 12 6 V G = 4. 5 V 8 4 5.0V 4 2 V G =4.5V 0 0 5 10 15 20 0 0 4 8 12 16 20 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.3 2.8 I D =4A V G =10V 1.2 2.4 Normalized BVDSS (V) Normalized RDS(ON) 1.1 2 1.6 1 1.2 0.9 0.8 0.8 -50 0 50 100 150 25 50 75 100 125 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Temperature 10 1.4 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.2 T j = 150 o C T j = 25 o C Normalized VGS(th) (V) 1 IS (A) 1 0.8 0.6 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP10N60W f=1.0MHz 16 10000 VGS , Gate to Source Voltage (V) C iss 12 I D =8A C (pF) V DS =480V 8 C oss 100 4 C rss 0 0 20 40 60 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 10 0.2 100us ID (A) 0.1 0.1 1ms 1 0.05 PDM 0.02 T c =25 o C Single Pulse 0.1 1 10 100 10ms 100ms DC t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 1000 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-3P E A SYMBOLS Millimeters MIN NOM MAX A 4.50 0.90 1.80 1.30 0.40 1.40 19.70 14.70 15.30 4.45 17.50 3.00 4.80 1.00 2.50 -0.60 -20.00 15.00 -5.45 -3.20 5.10 1.30 3.20 2.30 0.90 2.20 20.30 15.30 16.10 6.45 20.50 3.40 c1 D D1 b b1 b2 c c1 D D1 E b1 b2 e L L c b 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-3P Part Number Package 10N60W LOGO YWWSSS Date Code (YWWSSS) Y Last Digit Of The Year WWWeek SSS Sequence 5 |
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